Preparation and Application of CIGS Thin Film Solar Cell by Single Target Sputtering

[Taiwan] NANOWIN TECH. CO., LTD.

NanoWin's procedures have 2 parts. One is CIGS compound making, the other is CIGS thin film solar cell making.

NanoWin uses solvothermal process to synthesis CIGS powder which is also called absorber layer material and use the powder to prepare a target under high temperature and high pressure. The reaction temperature of solvothermal process is under 130-250 degree. First, add CuCl_2, InCl₃, GaCl_3, Na₂Se together and use ethylenediamine as solvent in noble gas condition. The total reaction is as below: 

[Cu(en)₂]⁺ + xInSe^2- + 1-xGaSe^2-› Cu(In_xGa_1-x)Se₂ + 2en

The powder is not agglomerative and it has some characteristics such as high purity, uniform, high crystallization and with narrow particles-size distributions. This way is better than melting which has to through calcine and polish processes and that will reduce the purity of the target and waste energy.

For the thin film process, it is not easy to control the thickness and ingredients by using co-evaporation. It can only make small size of panel but not suitable for the bigger size. Besides, the process needs high purity of materials which costs a lot of money. On the contrary, NanoWin's RF sputter technology is very different which can extend the process window, raise the efficiency, can make bigger size. The equipment of sputter process can be made in the home country; therefore, the cost can be very low. The steps of the RF sputter are glass washer, sputtering Mo layer, sputtering CIGS absorber layer, sputtering CdS which is buffer layer, sputtering AZO transparent conducting oxide layer, IT test and the process is finished.

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